Preparation and Characterization of Cu2ZnSn(SxSe1-x)4 Thin Films by Synchronous Sulfo-Selenization of Single-Source Evaporated Metallic Precursors

被引：15
作者：
Jiang, Xin [1 ,2 ,3 ]
Shao, Lexi [2 ]
Zhang, Jun [2 ]
Chen, Jianmin [1 ]
机构：
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Zhanjiang Normal Univ, Sch Phys Sci & Technol, Zhanjiang 524048, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
ACTA METALLURGICA SINICA-ENGLISH LETTERS | 2014年 / 27卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Cu2ZnSn(S; Se)(4); Evaporation; Sulfo-selenization; Thin film; OPTICAL-PROPERTIES; GROWTH;
D O I：
10.1007/s40195-014-0098-3
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
Cu2ZnSn(S,Se)(4) (CZTSSe) thin film was prepared using a simple two-step approach based on the single-source evaporation and synchronous sulfo-selenization. Composition, microstructure, morphology, and properties of the as-prepared CZTSSe thin films were investigated. XRD and Raman patterns confirmed the formation of single-phase CZTSSe solid solutions. SEM results showed that the CZTSSe thin film had a uniform morphology and large grains. EDS results revealed the composition of CZTSSe film was Cu:Zn:Sn:S:Se = 23.7:12.6:12.2:37.7:13.8 (in at%), which was in accordance with the stoichiometric Cu2ZnSn(S,Se)(4). The optical band gap of CZTSSe thin film evaluated from its UV Vis spectrum was 1.33 eV. The resistivity, carrier concentration, and mobility were 0.53 Omega cm, 7.9 x 10(18) cm(3), and 7.5 cm(2)/(Vs), respectively.
引用
收藏
页码：689 / 693
页数：5
相关论文
共 20 条
[1]  
Chawla V., 2012, PHOT SPEC C 38 IEEE
[2]   Compositional dependence of structural and electronic properties of Cu2ZnSn(S,Se)4 alloys for thin film solar cells [J].
Chen, Shiyou ;
Walsh, Aron ;
Yang, Ji-Hui ;
Gong, X. G. ;
Sun, Lin ;
Yang, Ping-Xiong ;
Chu, Jun-Hao ;
Wei, Su-Huai .
PHYSICAL REVIEW B, 2011, 83 (12)
[3]   Single-Step Sulfo-Selenization Method to Synthesize Cu2ZnSn(SySe1-y)4 Absorbers from Metallic Stack Precursors [J].
Fairbrother, Andrew ;
Fontane, Xavier ;
Izquierdo-Roca, Victor ;
Espindola-Rodriguez, Moises ;
Lopez-Marino, Simon ;
Placidi, Marcel ;
Lopez-Garcia, Juan ;
Perez-Rodriguez, Alejandro ;
Saucedo, Edgardo .
CHEMPHYSCHEM, 2013, 14 (09) :1836-1843
[4]   Cu2ZnSn(S1-xSex)4 based solar cell produced by selenization of vacuum deposited precursors [J].
Grenet, Louis ;
Bernardi, Sergio ;
Kohen, David ;
Lepoittevin, Christophe ;
Noel, Sebastien ;
Karst, Nicolas ;
Brioude, Arnaud ;
Perraud, Simon ;
Mariette, Henri .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 101 :11-14
[5]   Photoluminescence and Raman study of Cu2ZnSn(SexS1-x)4 monograins for photovoltaic applications [J].
Grossberg, M. ;
Krustok, J. ;
Raudoja, J. ;
Timmo, K. ;
Altosaar, M. ;
Raadik, T. .
THIN SOLID FILMS, 2011, 519 (21) :7403-7406
[6]   Fabrication of 7.2% Efficient CZTSSe Solar Cells Using CZTS Nanocrystals [J].
Guo, Qijie ;
Ford, Grayson M. ;
Yang, Wei-Chang ;
Walker, Bryce C. ;
Stach, Eric A. ;
Hillhouse, Hugh W. ;
Agrawal, Rakesh .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (49) :17384-17386
[7]   Single-step preparation and characterization of Cu2ZnSn(SxSe1-x)4 thin films deposited by pulsed laser deposition method [J].
He, Jun ;
Sun, Lin ;
Ding, Nuofan ;
Kong, Hui ;
Zuo, Shaohua ;
Chen, Shiyou ;
Chen, Ye ;
Yang, Pingxiong ;
Chu, Junhao .
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 529 :34-37
[8]   Composition dependence of structure and optical properties of Cu2ZnSn(S,Se)4 solid solutions: An experimental study [J].
He, Jun ;
Sun, Lin ;
Chen, Shiyou ;
Chen, Ye ;
Yang, Pingxiong ;
Chu, Junhao .
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 511 (01) :129-132
[9]   ELECTRICAL AND OPTICAL-PROPERTIES OF STANNITE-TYPE QUATERNARY SEMICONDUCTOR THIN-FILMS [J].
ITO, K ;
NAKAZAWA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11) :2094-2097
[10]   Growth of Cu2ZnSnSe4 Thin Films by Selenization of Sputtered Single-Layered Cu-Zn-Sn Metallic Precursors from a Cu-Zn-Sn Alloy Target [J].
Kim, Kyoo-Ho ;
Amal, Ikhlasul .
ELECTRONIC MATERIALS LETTERS, 2011, 7 (03) :225-230
12