Passive switching of electromagnetic devices with memristors

被引：21

作者：

Bray, Matthew G. ^{[1
]}

Werner, Douglas H. ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 07期

关键词：

electromagnetic devices; finite difference time-domain analysis; frequency selective surfaces; FILMS;

D O I：

10.1063/1.3299020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method of using memristors as passive electromagnetic switches is demonstrated via full-wave finite-difference time-domain simulations. A memristor is a fundamental circuit element that directly links flux and charge. These circuit elements exhibit a resistive memory effect, which results from a frequency dependent hysteresis. Therefore a memristor can be used as a resistive switch whose resistance varies under low frequency excitation but is unchanged at high frequencies. Utilizing this property, a passive reconfigurable band-pass frequency selective surface that is switched via space waves was designed and simulated.

引用

页数：3

共 11 条

[1] A novel design methodology for reconfigurable frequency selective surfaces using genetic algorithms [J].

Bossard, JA ;

Werner, DH ;

Mayer, TS ;

Drupp, RP .

IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 2005, 53 (04) :1390-1400

[2] Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications [J].

Chen, Xinman ;

Wu, Guangheng ;

Jiang, Peng ;

Liu, Weifang ;

Bao, Dinghua .

APPLIED PHYSICS LETTERS, 2009, 94 (03)

[3] MEMRISTIVE DEVICES AND SYSTEMS [J].

CHUA, LO ;

KANG, SM .

PROCEEDINGS OF THE IEEE, 1976, 64 (02) :209-223

[4] MEMRISTOR - MISSING CIRCUIT ELEMENT [J].

CHUA, LO .

IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05) :507-+

[5] Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches -: art. no. 172107 [J].

Dong, R ;

Wang, Q ;

Chen, LD ;

Shang, DS ;

Chen, TL ;

Li, XM ;

Zhang, WQ .

APPLIED PHYSICS LETTERS, 2005, 86 (17) :1-3

[6] Memristive switching of MgO based magnetic tunnel junctions [J].

Krzysteczko, Patryk ;

Reiss, Guenter ;

Thomas, Andy .

APPLIED PHYSICS LETTERS, 2009, 95 (11)

[7] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[8] Spin memristive systems: Spin memory effects in semiconductor spintronics [J].

Pershin, Yu. V. ;

Di Ventra, M. .

PHYSICAL REVIEW B, 2008, 78 (11)

[9] The missing memristor found [J].

Strukov, Dmitri B. ;

Snider, Gregory S. ;

Stewart, Duncan R. ;

Williams, R. Stanley .

NATURE, 2008, 453 (7191) :80-83

[10]

Taflove A., 2005, COMPUTATIONAL ELECTR

← 1 2 →