Engineering Parallel and Perpendicular Polarized Photoluminescence from a Single Semiconductor Nanowire by Crystal Phase Control

被引：58

作者：

Hoang, Thang Ba ^{[1
]}

Moses, Anthonysamy F. ^{[1
]}

Ahtapodov, Lyubomir ^{[1
]}

Zhou, Hailong ^{[1
]}

Dheeraj, Dasa L. ^{[1
]}

van Helvoort, Antonius T. J. ^{[2
]}

Fimland, Bjorn-Ove ^{[1
]}

Weman, Helge ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

[2] Norwegian Univ Sci & Technol, Dept Phys, NO-7491 Trondheim, Norway

来源：

NANO LETTERS | 2010年 / 10卷 / 08期

关键词：

Nanowires; photoluminescence; polarization; selection rules; wurtzite; zinc blende; GAAS NANOWIRES;

D O I：

10.1021/nl101087e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on a crystal phase-dependent photoluminescence (PL) polarization effect in individual wurtzite GaAs nanowires with a zinc blende GaAsSb insert grown by Au-assisted molecular beam epitaxy. The PL emission from the zinc blonde GaAsSb insert is strongly polarized along the nanowire axis while the emission from the wurtzite GaAs nanowire is perpendicularly polarized. The results indicate that the crystal phases, through optical selection rules, are playing an important role in the alignment of the PL polarization in nanowires besides the linear polarization induced by the dielectric mismatch. The strong excitation power dependence and long recombination lifetimes (similar to 4 ns) from the wurtzite GaAs and zinc blende GaAsSb-related PL emission strongly indicate the existence of type II band alignments in the nanowire due m the presence of nanometer thin zinc blende segments and stacking faults in the wurtzite GaAs barrier.

引用

页码：2927 / 2933

页数：7

共 23 条

[1] Lasing in single cadmium sulfide nanowire optical cavities [J].

Agarwal, R ;

Barrelet, CJ ;

Lieber, CM .

NANO LETTERS, 2005, 5 (05) :917-920

[2] POLARIZATION OF FLUORESCENCE IN CDS AND ZNS SINGLE CRYSTALS [J].

BIRMAN, JL .

PHYSICAL REVIEW LETTERS, 1959, 2 (04) :157-159

[3] Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts [J].

Dheeraj, Dasa L. ;

Patriarche, Gilles ;

Zhou, Hailong ;

Hoang, Thang B. ;

Moses, Anthonysamy F. ;

Gronsberg, Sondre ;

van Helvoort, Antonius T. J. ;

Fimland, Bjorn-Ove ;

Weman, Helge .

NANO LETTERS, 2008, 8 (12) :4459-4463

[4] Single-nanowire electrically driven lasers [J].

Duan, XF ;

Huang, Y ;

Agarwal, R ;

Lieber, CM .

NATURE, 2003, 421 (6920) :241-245

[5] Why does wurtzite form in nanowires of III-V zinc blende semiconductors? [J].

Glas, Frank ;

Harmand, Jean-Christophe ;

Patriarche, Gilles .

PHYSICAL REVIEW LETTERS, 2007, 99 (14)

[6] Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires [J].

Hoang, Thang B. ;

Moses, A. F. ;

Zhou, H. L. ;

Dheeraj, D. L. ;

Fimland, B. O. ;

Weman, H. .

APPLIED PHYSICS LETTERS, 2009, 94 (13)

[7] Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires [J].

Hoang, Thang Ba ;

Titova, Lyubov V. ;

Yarrison-Rice, Jan M. ;

Jackson, Howard E. ;

Govorov, Alexander O. ;

Kim, Yong ;

Joyce, Hannah J. ;

Tan, H. Hoe ;

Jagadish, Chennupati ;

Smith, Leigh M. .

NANO LETTERS, 2007, 7 (03) :588-595

[8] Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy [J].

Ihn, Soo-Ghang ;

Ryu, Mee-Yi ;

Song, Jong-In .

SOLID STATE COMMUNICATIONS, 2010, 150 (15-16) :729-733

[9] Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach [J].

Liu, GB ;

Chuang, SL ;

Park, SH .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :5554-5561

[10] Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells [J].

Luo, XD ;

Hu, CY ;

Xu, ZY ;

Luo, HL ;

Wang, YQ ;

Wang, JN ;

Ge, WK .

APPLIED PHYSICS LETTERS, 2002, 81 (20) :3795-3797

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