Electronic and magnetic properties of SnS2 monolayer doped with 4d transition metals

被引:42
作者
Xiao, Wen-Zhi [1 ]
Xiao, Gang [1 ,2 ]
Rong, Qing-Yan [1 ]
Chen, Qiao [1 ]
Wang, Ling-Ling [2 ]
机构
[1] Hunan Inst Engn, Sch Sci, Xiangtan 411104, Peoples R China
[2] Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China
关键词
TOTAL-ENERGY CALCULATIONS; SINGLE; SEMICONDUCTORS; 1ST-PRINCIPLES;
D O I
10.1016/j.jmmm.2017.04.090
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the electronic structures and magnetic properties of SnS2 monolayers substitutionally doped with 4-d transition-metal through systematic first principles calculations. The doped complexes exhibit interesting electronic and magnetic behaviors, depending on the interplay between crystal field splitting, Hund's rule, and 4d levels. The system doped with Y is nonmagnetic metal. Both the Zr- and Pd-doped systems remain nonmagnetic semiconductors. Doping results in half-metallic states for Nb-, Ru-, Rh-, Ag, and Cd doped cases, and magnetic semiconductors for systems with Mo and Tc dopants. In particular, the Nb- and Mo-doped systems display long-ranged ferromagnetic ordering with Curie temperature above room temperature, which are primarily attributable to the double-exchange mechanism, and the p-d/p-p hybridizations, respectively. Moreover, The Mo-doped system has excellent energetic stability and flexible mechanical stability, and also possesses remarkable dynamic and thermal (500 K) stability. Our studies demonstrate that Nb- and Mo-doped SnS2 monolayers are promising candidates for preparing 2D diluted magnetic semiconductors, and hence will be a helpful clue for experimentalists. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:152 / 162
页数:11
相关论文
共 45 条
[1]   Theoretical prediction of long-range ferromagnetism in transition-metal atom-doped d0 dichalcogenide single layers SnS2 and ZrS2 [J].
Ao, L. ;
Pham, A. ;
Xiao, H. Y. ;
Zu, X. T. ;
Li, S. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (36) :25151-25160
[2]   Engineering the electronic and magnetic properties of d0 2D dichalcogenide materials through vacancy doping and lattice strains [J].
Ao, L. ;
Pham, A. ;
Xiao, H. Y. ;
Zu, X. T. ;
Li, S. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (10) :7163-7168
[3]   Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure [J].
Ataca, C. ;
Sahin, H. ;
Ciraci, S. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (16) :8983-8999
[4]   Recent Advances in Two-Dimensional Materials beyond Graphene [J].
Bhimanapati, Ganesh R. ;
Lin, Zhong ;
Meunier, Vincent ;
Jung, Yeonwoong ;
Cha, Judy ;
Das, Saptarshi ;
Xiao, Di ;
Son, Youngwoo ;
Strano, Michael S. ;
Cooper, Valentino R. ;
Liang, Liangbo ;
Louie, Steven G. ;
Ringe, Emilie ;
Zhou, Wu ;
Kim, Steve S. ;
Naik, Rajesh R. ;
Sumpter, Bobby G. ;
Terrones, Humberto ;
Xia, Fengnian ;
Wang, Yeliang ;
Zhu, Jun ;
Akinwande, Deji ;
Alem, Nasim ;
Schuller, Jon A. ;
Schaak, Raymond E. ;
Terrones, Mauricio ;
Robinson, Joshua A. .
ACS NANO, 2015, 9 (12) :11509-11539
[5]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[6]   Elastic properties of hydrogenated graphene [J].
Cadelano, Emiliano ;
Palla, Pier Luca ;
Giordano, Stefano ;
Colombo, Luciano .
PHYSICAL REVIEW B, 2010, 82 (23)
[7]   Mechanical and thermal properties of h-MX2 (M = Cr, Mo, W; X = O, S, Se, Te) monolayers: A comparative study [J].
Cakir, Deniz ;
Peeters, Francois M. ;
Sevik, Cem .
APPLIED PHYSICS LETTERS, 2014, 104 (20)
[8]   Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems [J].
Cheng, Y. C. ;
Zhu, Z. Y. ;
Mi, W. B. ;
Guo, Z. B. ;
Schwingenschloegl, U. .
PHYSICAL REVIEW B, 2013, 87 (10)
[9]   PHASE-TRANSITIONS AND ELASTICITY IN ZIRCONIA [J].
COHEN, RE ;
MEHL, MJ ;
BOYER, LL .
PHYSICA B & C, 1988, 150 (1-2) :1-9
[10]   Defect-induced intrinsic magnetism in wide-gap III nitrides [J].
Dev, Pratibha ;
Xue, Yu ;
Zhang, Peihong .
PHYSICAL REVIEW LETTERS, 2008, 100 (11)