Wet chemical etching survey of III-nitrides

被引：0

作者：

Cho, H ^{[1
]}

Hays, DC ^{[1
]}

Vartuli, CB ^{[1
]}

Pearton, SJ ^{[1
]}

Abernathy, CR ^{[1
]}

MacKenzie, JD ^{[1
]}

Ren, F ^{[1
]}

Zolper, JC ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

POWER SEMICONDUCTOR MATERIALS AND DEVICES | 1998年 / 483卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75 degrees C. Only KOH-based solutions were found to etch AlN and InAlN. No etchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity. The native oxide on most of the nitrides could be removed in potassium tetraborate at 75 degrees C, or HCl/H2O at 25 degrees C.

引用

页码：265 / 270

页数：6