Discrete dopant effects on statistical variation of random telegraph signal magnitude

被引：89

作者：

Sonoda, Ken'ichiro ^{[1
]}

Ishikawa, Kiyoshi ^{[1
]}

Eimori, Takahisa ^{[1
]}

Tsuchiya, Osamu ^{[1
]}

机构：

[1] Renesas Technol Corp, Prod & Technol Unit, Itami, Hyogo 6640005, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 08期

关键词：

charge carrier processes; MOSFETs; random noise; semiconductor-device modeling; semiconductor-device noise;

D O I：

10.1109/TED.2007.900684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the discrete channel dopant effects on the statistical variation of random telegraph signal (RTS) magnitude, which is defined by the threshold-voltage shift by RTS in MOSFETs. An analytical model for the statistical variation of RTS magnitude is presented. Considering discrete dopant effects, the RTS magnitude of MOSFETs exhibits a log-normal distribution, while the threshold voltage itself exhibits a normal distribution. The threshold-voltage shift by RTS will become a serious concern in 50-nm Flash memories and beyond.

引用

页码：1918 / 1925

页数：8

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