Dark counts in nanostructured NbN superconducting single-photon detectors and bridges

被引:53
作者
Kitaygorsky, J.
Komissarov, I.
Jukna, A.
Pan, D.
Minaeva, O.
Kaurova, N.
Divochiy, A.
Korneev, A.
Tarkhov, M.
Voronov, B.
Milostnaya, I.
Gol'tsman, G.
Sobolewski, Roman R.
机构
[1] Univ Rochester, Rochester, NY 14627 USA
[2] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
[3] Moscow State Pedag Univ, Moscow 119345, Russia
关键词
BKT transition; dark counts in photodetctors; single-photon optical detectors; superconducting nanobridges; two-dimensional superconductors; vortex-antivortex depairing;
D O I
10.1109/TASC.2007.898109
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present our studies on dark counts, observed as transient voltage pulses, in current-biased NbN superconducting single-photon detectors (SSPDs), as well as in ultrathin (similar to 4 nm), submicrometer-width (100 to 500 nm) NbN nanobridges. The duration of these spontaneous voltage pulses varied from 250 ps to 5 ns, depending on the device geometry, with the longest pulses observed in the large kinetic-inductance SSPD structures. Dark counts were measured while the devices were completely isolated (shielded by a metallic enclosure) from the outside world, in a temperature range between 1.5 and 6 K. Evidence shows that in our two-dimensional structures the dark counts are due to the depairing of vortex-antivortex pairs caused by the applied bias current. Our results shed some light on the vortex dynamics in 2-D superconductors and, from the applied point of view, on intrinsic performance of nanostructured SSPDs.
引用
收藏
页码:275 / 278
页数:4
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