Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

被引：53
作者：
Wu, Yewchung Sermon [1 ]
Cheng, Ji-Hao
Peng, Wei Chih
Ouyang, Hao
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 40227, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 25期
关键词：
D O I：
10.1063/1.2749866
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The KrF pulsed excimer laser (248nm) and the frequency-tripled neodymium doped yttrium aluminum garnet laser (355nm) have been used to separate GaN thin films from sapphire substrates and transfer to bond other substrate. However, these processes would increase the dislocation density, resulting in an increase of the leakage current. In this study, the effects of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes were studied. (c) 2007 American Institute of Physics.
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