Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

被引：9

作者：

Asghar, M. ^{[1
]}

Mahmood, K. ^{[1
]}

Hasan, M. A. ^{[2
]}

Ferguson, I. T. ^{[2
]}

Tsu, R. ^{[2
]}

Willander, M. ^{[3
]}

机构：

[1] Islamia Univ Bahawalpur, Dept Phys, Bahawalpur 63100, Pakistan

[2] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

[3] Linkoping Univ, Dept Sci & Technol, Norrkoping, Sweden

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 09期

关键词：

ZnO; secondary ion mass spectroscopy; photoluminescence; Raman spectroscopy; ELECTRICAL CHARACTERIZATION;

D O I：

10.1088/1674-1056/23/9/097101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 +/- 0.03 eV and capture cross-section of 8.57 +/- 10(-18) cm(2). Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

引用

页数：5

共 28 条

[1] Electrical characterization of 1.8 MeV proton-bombarded ZnO [J].