Classical linear magnetoresistance in epitaxial graphene on SiC

被引:36
|
作者
Wang, W. J. [1 ]
Gao, K. H. [1 ]
Li, Z. Q. [1 ]
Lin, T. [2 ]
Li, J. [3 ]
Yu, C. [3 ]
Feng, Z. H. [3 ]
机构
[1] Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Hebei Semicond Res Inst, Sci & Technol ASIC Lab, Shijiazhuang 050051, Peoples R China
基金
中国国家自然科学基金;
关键词
QUANTUM MAGNETORESISTANCE; BILAYER GRAPHENE; ELECTRON; SEMICONDUCTORS; SCATTERING;
D O I
10.1063/1.4901175
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the magnetotransport properties of monolayer graphene grown on SiC substrates. At low magnetic fields, a parabolic magnetoresistance (MR) is observed. With increasing magnetic field, however, this parabolic MR is changed to a linear field dependence that does not show signs of saturation for magnetic fields up to 9 T. At a fixed field, the value of the linear MR decreases with increasing temperature, with its value as large as 80% under 9 T at room temperature. Furthermore, the Hall mobility is found to be suppressed when the sample is annealed at 390K under a helium atmosphere, with this suppression causing a decrease of the observed linear MR. The decrease in the linear MR shows a linear dependence on Hall mobility, which is indicative of the application of the monolayer graphene. We attribute the observed linear MR to a classical origin owing to the close relation between the MR and Hall mobility. (C) 2014 AIP Publishing LLC.
引用
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页数:4
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