Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys

被引：3

作者：

Prutskij, T. ^{[1
]}

Makarov, N. ^{[1
]}

Attolini, G. ^{[2
]}

机构：

[1] BUAP, Inst Ciencias, Privada 17 Norte,3417, Puebla 72050, Pue, Mexico

[2] IMEM CNR, Parco Area Sci 37-A, I-43010 Parma, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 11期

关键词：

STRAIN; GAINP2;

D O I：

10.1063/1.4944436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature. (C) 2016 AIP Publishing LLC.

引用

页数：5

共 11 条

[1] BAND-GAP REDUCTION AND VALENCE-BAND SPLITTING OF ORDERED GAINP2 [J].

ERNST, P ;

GENG, C ;

SCHOLZ, F ;

SCHWEIZER, H ;

ZHANG, Y ;

MASCARENHAS, A .

APPLIED PHYSICS LETTERS, 1995, 67 (16) :2347-2349

[2] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[3] POLARIZED PHOTOLUMINESCENCE MEASUREMENTS OF THE VALENCE-BAND SPLITTING IN SINGLE-VARIANT, SPONTANEOUSLY ORDERED GAINP(2) [J].

HORNER, GS ;

MASCARENHAS, A ;

ALONSO, RG ;

FRIEDMAN, DJ ;

SINHA, K ;

BERTNESS, KA ;

ZHU, JG ;

OLSON, JM .

PHYSICAL REVIEW B, 1993, 48 (07) :4944-4947

[4] POLARIZED BAND-EDGE PHOTOLUMINESCENCE AND ORDERING IN GA0.52IN0.48P [J].

MASCARENHAS, A ;

KURTZ, S ;

KIBBLER, A ;

OLSON, JM .

PHYSICAL REVIEW LETTERS, 1989, 63 (19) :2108-2111

[5] Polarized and non-polarized photoluminescence of GaInP2 alloy with partial CuPt-type atomic ordering: ordered domains vs. disordered regions [J].

Ning, J. Q. ;

Xu, S. J. ;

Deng, Z. ;

Su, Z. C. .

JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (30) :6119-6124

[6] Band alignment study of lattice-matched In0.49Ga0.51P and Ge using x-ray photoelectron spectroscopy [J].

Owen, Man Hon Samuel ;

Zhou, Qian ;

Gong, Xiao ;

Zhang, Zheng ;

Pan, Ji Sheng ;

Loke, Wan Khai ;

Wicaksono, Satrio ;

Yoon, Soon Fatt ;

Tok, Eng Soon ;

Yeo, Yee-Chia .

APPLIED PHYSICS LETTERS, 2014, 105 (10)

[7]

Prutskij T, 2007, AIP CONF PROC, V893, P145, DOI 10.1063/1.2729811

[8]

Schubert E.F., 2015, Kitk-Othmer Encyclopedia of Chemical Technology, P1, DOI DOI 10.1002/0471238961.1209070811091908.A01.PUB3

[9] OPTICAL-PROPERTIES OF ZINCBLENDE SEMICONDUCTOR ALLOYS - EFFECTS OF EPITAXIAL STRAIN AND ATOMIC ORDERING [J].

WEI, SH ;

ZUNGER, A .

PHYSICAL REVIEW B, 1994, 49 (20) :14337-14351

[10] STRAIN EFFECTS ON THE SPECTRA OF SPONTANEOUSLY ORDERED GAXIN1-XP [J].

WEI, SH ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1994, 64 (06) :757-759

← 1 2 →