Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

被引:5
|
作者
Kumar, Avishek [1 ,2 ,3 ]
Law, Felix [1 ]
Dalapati, Goutam K. [3 ]
Subramanian, Gomathy S. [3 ]
Widenborg, Per I. [1 ]
Tan, Hui R. [3 ]
Aberle, Armin G. [1 ,2 ]
机构
[1] Natl Univ Singapore, Solar Energy Res Inst Singapore, Singapore 117574, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore
[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2014年 / 32卷 / 06期
基金
新加坡国家研究基金会;
关键词
ALUMINUM-INDUCED CRYSTALLIZATION; CHEMICAL-VAPOR-DEPOSITION; POLY-SI; SOLAR-CELLS; RAMAN-SPECTROSCOPY; AMORPHOUS-SILICON; GLASS; ELECTRON; QUALITY; STRESS;
D O I
10.1116/1.4897298
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 mu m in width, and with high Hall mobility of about 71.5 cm(2)/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH3 (2% in H-2)/SiH4 gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron back-scatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 mu m with increase of the PH3 (2% in H-2)/SiH4 gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH3 (2% in H-2)/SiH4 gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films. (C) 2014 American Vacuum Society.
引用
收藏
页数:9
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