Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

被引：9
作者：
Ho, C. Y. [1 ,2 ]
Chiu, S. H. [1 ,2 ]
Ke, J. J. [1 ,2 ]
Tsai, K. T. [1 ,2 ]
Dai, Y. A. [1 ,2 ]
Hsu, J. H. [3 ]
Chang, M. L. [3 ]
He, J. H. [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[3] Integrated Serv Technol, Hsinchu 30072, Taiwan
来源：
NANOTECHNOLOGY | 2010年 / 21卷 / 13期
关键词：
SILICON NANOWIRES; GROWTH;
D O I：
10.1088/0957-4484/21/13/134008
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (rho(c)) of 1.54 x 10(-6) Omega cm(2). Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow rho(c). The value of rho(c) lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.
引用
收藏
页数：5
相关论文
共 29 条
  • [1] MODIFICATION OF CRYSTALLINE SEMICONDUCTOR SURFACES BY LOW-ENERGY AR+ BOMBARDMENT - SI(111) AND GE(100)
    BOCK, W
    GNASER, H
    OECHSNER, H
    [J]. SURFACE SCIENCE, 1993, 282 (03) : 333 - 341
  • [2] Systematic study of contact annealing: Ambipolar silicon nanowire transistor with improved performance
    Byon, K.
    Tham, D.
    Fischer, J. E.
    Johnson, A. T.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (14)
  • [3] Ultra-low contact resistance of epitaxially interfaced bridged silicon nanowires
    Chaudhry, Anurag
    Ramamurthi, Vishwanath
    Fong, Erin
    Islam, M. Saif
    [J]. NANO LETTERS, 2007, 7 (06) : 1536 - 1541
  • [4] Morphological Control of Single-Crystalline Silicon Nanowire Arrays near Room Temperature
    Chen, Chia-Yun
    Wu, Chi-Sheng
    Chou, Chia-Jen
    Yen, Ta-Jen
    [J]. ADVANCED MATERIALS, 2008, 20 (20) : 3811 - +
  • [5] Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species
    Cui, Y
    Wei, QQ
    Park, HK
    Lieber, CM
    [J]. SCIENCE, 2001, 293 (5533) : 1289 - 1292
  • [6] Salicidation process using NiSi and its device application
    Deng, F
    Johnson, RA
    Asbeck, PM
    Lau, SS
    Dubbelday, WB
    Hsiao, T
    Woo, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) : 8047 - 8051
  • [7] Silicon vertically integrated nanowire field effect transistors
    Goldberger, Josh
    Hochbaum, Allon I.
    Fan, Rong
    Yang, Peidong
    [J]. NANO LETTERS, 2006, 6 (05) : 973 - 977
  • [8] Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt
    He, J. H.
    Chang, P. H.
    Chen, C. Y.
    Tsai, K. T.
    [J]. NANOTECHNOLOGY, 2009, 20 (13)
  • [9] Enhanced thermoelectric performance of rough silicon nanowires
    Hochbaum, Allon I.
    Chen, Renkun
    Delgado, Raul Diaz
    Liang, Wenjie
    Garnett, Erik C.
    Najarian, Mark
    Majumdar, Arun
    Yang, Peidong
    [J]. NATURE, 2008, 451 (7175) : 163 - U5
  • [10] Resolving microscopic interfaces in Si1-xGex alloy nanowire devices
    Jeon, Eun-Kyoung
    Seo, Hyunsang
    Ahn, Chi Won
    Seong, Hankyu
    Choi, Heon Jin
    Kim, Ju-Jin
    Kong, Ki-jeong
    Buh, Gyoungho
    Chang, Hyunju
    Lee, Jeong-O
    [J]. NANOTECHNOLOGY, 2009, 20 (11)
123