Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz

被引:18
作者
Ponchel, Freddy [1 ]
Legier, Jean-Fancois [2 ]
Soyer, Caroline [2 ]
Remiens, Denis [2 ]
Midy, Jean [1 ]
Lasri, Tuami [2 ]
Gueguan, Guillaume [1 ]
机构
[1] ST Microelect, SAS 16, F-37071 Tours, France
[2] Univ Sci & Technol Lille, CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France
关键词
barium compounds; coplanar waveguides; dielectric losses; ferroelectric thin films; finite element analysis; permittivity; sputter deposition; strontium compounds;
D O I
10.1063/1.3454772
中图分类号
O59 [应用物理学];
学科分类号
摘要
400-nm-thick Ba0.3Sr0.7TiO3 thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1 mu m slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz. Permittivity, loss tangent, and tunability are extracted through measurements and home made finite element analysis. Tunability of 33% and 29%, with 30 V maximum applied voltage (electric field of 300 kV/cm), are measured at 5 GHz and 60 GHz, respectively, while the dielectric losses evolve from 0.5% to 5%. A brief highlight is proposed about tunable silicon integrated quarter wavelength transformer potentialities for impedance matching. (C) 2010 American Institute of Physics. [doi:10.1063/1.3454772]
引用
收藏
页数:3
相关论文
共 9 条
[1]   Structure control of Pb(Zr,Ti)O-3 films using PbTiO3 buffer layers produced by magnetron sputtering [J].
Cattan, E ;
Velu, G ;
Jaber, B ;
Remiens, D ;
Thierry, B .
APPLIED PHYSICS LETTERS, 1997, 70 (13) :1718-1720
[2]   Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Ba1-xSrxTiO3 based thin films with silicon substrates [J].
Cole, MW ;
Joshi, PC ;
Ervin, M ;
Wood, M ;
Pfeffer, RL .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :3967-3973
[3]   Dispersion and loss of ferroelectric Ba0.5Sr0.5TiO3 thin films up to 110 GHz [J].
Houzet, Gregory ;
Burgnies, Ludovic ;
Velu, Gabriel ;
Carru, Jean-Claude ;
Lippens, Didier .
APPLIED PHYSICS LETTERS, 2008, 93 (05)
[4]   Layered (BaxSr1-x)Ti1+yO3+z thin films for high frequency tunable devices [J].
Im, J ;
Auciello, O ;
Streiffer, SK .
THIN SOLID FILMS, 2002, 413 (1-2) :243-247
[5]   Proximity effect of neighbour victim lossy interconnects on a single attacker and vice versa [J].
Ponchel, F. ;
Legier, J. F. ;
Paleczny, E. ;
Seguinot, C. ;
Deschacht, D. .
2007 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, VOLS 1 AND 2, 2007, :406-+
[6]   Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate: Analysis by two-dimensional tangential finite element method [J].
Ponchel, F. ;
Midy, J. ;
Legier, J. F. ;
Soyer, C. ;
Remiens, D. ;
Lasri, T. ;
Gueguan, G. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)
[7]   Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer [J].
Xiao, Bo ;
Liu, Hongrui ;
Avrutin, Vitaliy ;
Leach, Jacob H. ;
Rowe, Emmanuel ;
Liu, Huiyong ;
Ozgur, Umit ;
Morkoc, Hadis ;
Chang, W. ;
Alldredge, L. M. B. ;
Kirchoefer, S. W. ;
Pond, J. M. .
APPLIED PHYSICS LETTERS, 2009, 95 (21)
[8]   Strain relaxation of epitaxial SrTiO3 thin films on LaAlO3 by two-step growth technique -: art. no. 142904 [J].
Yamada, T ;
Astafiev, KF ;
Sherman, VO ;
Tagantsev, AK ;
Muralt, P ;
Setter, N .
APPLIED PHYSICS LETTERS, 2005, 86 (14) :1-3
[9]   Epitaxial growth of Ba0.3Sr0.7TiO3 thin films on Al2O3(0001) using ultrathin TiN layer as a sacrificial template [J].
Yamada, Tomoaki ;
Muralt, Paul ;
Sherman, Vladimir O. ;
Sandu, Cosmin S. ;
Setter, Nava .
APPLIED PHYSICS LETTERS, 2007, 90 (14)