Effect of thermal treatment on the performance of ZnO based metal-insulator-semiconductor ultraviolet photodetectors

被引：41

作者：

Ali, Ghusoon M. ^{[1
]}

Chakrabarti, P. ^{[1
]}

机构：

[1] Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Ctr Microelect Res, Varanasi 221005, Uttar Pradesh, India

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 03期

关键词：

annealing; II-VI semiconductors; MIS devices; photodetectors; Schottky barriers; semiconductor thin films; sol-gel processing; ultraviolet detectors; wide band gap semiconductors; zinc compounds; THIN-FILMS;

D O I：

10.1063/1.3467204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The article reports fabrication, characterization, and testing of the performance of ZnO-based metal-insulator-semiconductor (MIS) Schottky barrier ultraviolet photodetectors under varying thermal treatment. The ZnO thin film was grown on p-type Si < 100 > substrate by using sol-gel technique. The electrical and optical characteristics of MIS photodetector were studied. The study revealed that the performance of the device improves with increasing postmetal deposition annealing temperature up to 250 degrees C approximately. For annealing temperature beyond 250 degrees C the performance of the device degrades drastically. The variation in the electrical and photoresponse properties of MIS photodetector can be attributed to combined effects of interfacial reaction and phase transition during the annealing process. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467204]

引用

页数：3

共 20 条

[1]

ALI GM, 2009, J NANOELECTRONS OPTO, V4, P1

[2] Oxygen plasma treated epitaxial ZnO thin films for Schottky ultraviolet detection [J].