La2O3 gate dielectrics for AlGaN/GaN HEMT

被引：21

作者：

Chen, J. ^{[1
]}

Kawanago, T. ^{[1
]}

Wakabayashi, H. ^{[1
]}

Tsutsui, K. ^{[1
]}

Iwai, H. ^{[1
]}

Nohata, D. ^{[2
]}

Nohira, H. ^{[2
]}

Kakushima, K. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo City Univ, Tokyo 1588557, Japan

来源：

MICROELECTRONICS RELIABILITY | 2016年 / 60卷

关键词：

AlGaN/GaN HEMT; Gate dielectrics; Threshold voltage; Power devices; Lanthanum oxide; VOLTAGE SHIFT;

D O I：

10.1016/j.microrel.2016.02.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The annealing temperature dependent electrical characteristics of La2O3 gate dielectrics for W gated AIGaN/GaN high electron mobility transistors (HEMTs) have been characterized. The threshold voltage (V-th) has been found to shift to positive direction with higher temperature annealing, exceeding those of Schottky HEMTs, presumably attributed to the presence of negative fixed charges at the interface between La2O3 and AlGaN layers. At a high temperature annealing over 500 degrees C, a high dielectric constant (k-value) of 27 has been achieved with poly crystallization of the La2O3 film, which is useful to limit the reduction in gate capacitance. A high k-value for La2O3 gate dielectrics and the presence of negative charges at the interface are attractive for AlGaN/GaN HEMTs with low gate leakage and normally-off operation. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：16 / 19

页数：4

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