DRAM storage time of milliseconds demonstrated in self-organized quantum dots

被引：0

作者：

Marent, A. ^{[1
]}

Geller, M.

Vasi'ev, A. P. ^{[1
]}

Semenova, E. S. ^{[1
]}

Zhukov, A. E. ^{[1
]}

Ustinov, V. M.

Bimberg, D.

机构：

[1] Russian Acad Sci, PhysicoTech Inst, St Petersburg, Russia

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

quantum dots; DLTS; capacitance spectroscopy; memory;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermally activated hole emission from differently charged InAs/GaAs quantum dots (QDs) was investigated by using deep level transient spectroscopy. In samples with an additional AlGaAs barrier below the QD layer, we obtain a thermal activation energy of 560 meV for hole emission from the QD ground states over the AlGaAs barrier. This large activation energy leads to a hole storage time at room temperature of about 5 ms, which is a typical DRAM refresh time.

引用

页码：1381 / +

页数：2

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