Contact and proximity lithography using 193 nm Excimer laser in Mask Aligner

被引：14

作者：

Partel, S. ^{[1
,2
]}

Zoppel, S. ^{[1
]}

Hudek, P. ^{[1
]}

Bich, A. ^{[3
]}

Vogler, U. ^{[3
]}

Hornung, M. ^{[4
]}

Voelkel, R. ^{[3
]}

机构：

[1] Vorarlberg Univ Appl Sci, A-6850 Dornbirn, Austria

[2] Univ Freiburg, Lab Sensors, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany

[3] SUSS MicroOpt SA, CH-2000 Neuchatel, Switzerland

[4] SUSS MicroTec Lithog GmbH, D-85748 Garching, Germany

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 5-8期

关键词：

Excimer laser; Mask Aligner; Proximity lithography; Micro optics; Vias; TSV;

D O I：

10.1016/j.mee.2009.11.171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe the use of an Excimer laser for full-field lithography in a Mask Aligner. The DUV light from the Excimer laser is homogenized by using micro lens based optical integrators instead of a macro lens array. A simulation of the intensity distribution for 5 pm squares was performed to visualize the diffraction effects and to show the potential of 193 nm illumination. It is demonstrated that compared to the conventional homogenization optics the MO Exposure Optics further improves the illumination uniformity, calculated as 1.8% for MO Exposure Optics and 2.9% for the A-Optics. Moreover the improved optical setup allows a modification of the angular spectrum by using exchangeable illumination filter plates (IFP). Compared to the A-Optics the main improvement effect of MO Exposure Optics is detectable in the patterning of layouts containing critical dimension from 8 mu m down to 2 mu m. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：936 / 939

页数：4