Investigation of carrier lifetime instabilities in Cz-grown silicon

被引：232

作者：

Schmidt, J ^{[1
]}

Aberle, AG ^{[1
]}

Hezel, R ^{[1
]}

机构：

[1] Inst Solarenergieforsch Hameln Emmerthal, ISFH, D-31860 Emmerthal, Germany

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.653914

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz wafers silicon wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 Omega cm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.

引用

页码：13 / 18

页数：6