SnO2 sol-gel derived films doped with platinum and antimony

被引：0
|
作者：
Savaniu, C [1 ]
Arnautu, A [1 ]
Cobianu, C [1 ]
Zaharescu, M [1 ]
Parlog, C [1 ]
Van den Berg, A [1 ]
机构：
[1] Natl Inst Microtechnol, Bucharest 77550, Romania
来源：
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SnO2 sol-gel derived thin films doped simultaneously with platinum and antimony are obtained and reported for the first time. Transparent, crack-free layers, deposited on silicon or porous silicon (PS) substrates were obtained with antimony doping in the range (0-2)% M, while the platinum addition was limited to maximum 1% M.
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页码：251 / 254
页数：4
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