SnO2 sol-gel derived films doped with platinum and antimony

被引：0

作者：

Savaniu, C ^{[1
]}

Arnautu, A ^{[1
]}

Cobianu, C ^{[1
]}

Zaharescu, M ^{[1
]}

Parlog, C ^{[1
]}

Van den Berg, A ^{[1
]}

机构：

[1] Natl Inst Microtechnol, Bucharest 77550, Romania

来源：

CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SnO2 sol-gel derived thin films doped simultaneously with platinum and antimony are obtained and reported for the first time. Transparent, crack-free layers, deposited on silicon or porous silicon (PS) substrates were obtained with antimony doping in the range (0-2)% M, while the platinum addition was limited to maximum 1% M.

引用

页码：251 / 254

页数：4

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