Modeling and Experimental Analysis of Photovoltaic Parameters of GaInP/GaAs Dual Junction p-i-n Solar Cell

被引:3
作者
Kinaci, Baris [1 ]
机构
[1] Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey
关键词
GaInP/GaAs solar cell; p-i-n structure; Modeling; Electrical characterization; OPTIMIZATION; TEMPERATURE; INTEGRATION; LAYER;
D O I
10.1007/s13538-021-00893-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this study, the modeling and experimental analysis of photovoltaic parameters of the GaInP/GaAs dual-junction (DJ) p-i-n solar cell structure were examined. The design of the GaInP/GaAs DJ p- i-n solar cell structure was done with the drift-diffusion model (DDM), and this structure was grown with the molecular beam epitaxy (MBE) system. The fundamental parameters (open-circuit voltage (V-OC), short-circuit current density (J(SC)), fill factor (FF), and energy conversion efficiency (eta)) of these structures were determined by both modeling and the current-voltage experimental measurements. All electrical output parameters of the GaInP/GaAs DJ p-i-n solar cells obtained from modeling and experimental were compared. An increase in solar cell efficiency was observed with the integration of the i-layer.
引用
收藏
页码:553 / 558
页数:6
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