Simulation of the influence of gain parameters on pulse formation process for VECSELs

被引：0
作者：
Zhang, Yiwei [1 ]
Hua, Lingling [1 ]
Zhuang, Bihui [1 ]
Tian, Jinrong [1 ]
Song, Yanrong [1 ]
机构：
[1] Beijing Univ Technol, Coll Phys & Optoelect, Fac Sci, Beijing, Peoples R China
来源：
24TH NATIONAL LASER CONFERENCE & FIFTEENTH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS | 2020年 / 11717卷
基金：
中国国家自然科学基金;
关键词：
VECSELs; passively mode-locked; simulation; pulse dynamics; GENERATION;
D O I：
10.1117/12.2587328
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Passively mode-locked optically pumped vertical external cavity surface-emitting lasers ( OP-VECSELs) have unique properties, such as excellent beam quality, high-average output power and high repetition rate. Many applications, including frequency comb and supercontinuum, require pulses in the femtosecond regime. A numerical model in the femtosecond regime is essential to understand the pulse formation mechanism. In this paper, we present a numerical model of passively mode-locked VECSELs in the femtosecond regime. We analyze the influence of gain parameters, such as small-signal gain, saturation energy, and the gain bandwidth on the pulse characteristics. The results of the simulation can provide a direction for designing the gain chip.
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页数：7
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