Dendritic growth in an aluminum-silicon alloy

被引:40
作者
Kaya, H. [1 ]
Cadirli, E.
Guenduez, M.
机构
[1] Nigde Univ, Fac Arts & Sci, Dept Phys, Nigde, Turkey
[2] Erciyes Univ, Fac Arts & Sci, Dept Phys, Kayseri, Turkey
关键词
Al-Si alloy; directional solidification; dendritic growth; microstructures;
D O I
10.1007/s11665-006-9002-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Unidirectional solidification experiments have been carried out on an Al-3 wt.% Si alloy as a function of temperature gradient, G and growth rate, V. The samples were solidified under steady-state conditions with a constant growth rate of 8.20 mu m/s at different temperature gradients (1.97-6.84 K/mm) and with a constant temperature gradient (6.84 K/mm) at different growth rates (8.20-492.76 mu m/s). Microstructure parameters (primary dendrite arm spacing, lambda(1), secondary dendrite arm spacing, lambda(2), dendrite tip radius, R and mushy zone depth, d) were measured as a function of temperature gradient and growth rate. The experimental results have been compared with the current theoretical models and similar experimental works.
引用
收藏
页码:12 / 21
页数:10
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