Breakdown Voltage Assessment of GaN HEMT Devices through Physics-Based Modeling

被引：0

作者：

Lashway, Christopher R. ^{[1
]}

Berzoy, Alberto ^{[1
]}

Elsayad, Nour ^{[1
]}

Mohammed, Osama ^{[1
]}

机构：

[1] Energy Syst Res Lab, 10555 West Flagler St,Engn Ctr 3983, Miami, FL 33174 USA

来源：

2017 INTERNATIONAL APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY SYMPOSIUM - ITALY (ACES) | 2017年

关键词：

GaN; HEMTs; physics based modeling; finite element analysis; wide band gap devices;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extensive study is conducted to evaluate breakdown mechanisms in gallium nitride (GaN) high electron mobility transistors (HEMT). A comprehensive physics-based model of a common HEMT provides the base comparison to conduct different material and geometric investigations. The variations are evaluated in a progression toward the optimal configuration: 1) varying the passivation material, 2) replacing the substrate material, 3) reducing the doping profile along the GaN and aluminum nitride (AlGaN) layers and 4) a field plate (FP) addition. The electric field distribution across the source, gate, and drain is analyzed for each case as well as their I-V curves until the breakdown voltage (BV). The best results are revealed under the FP case.

引用

页数：2

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