Phonon properties of group IV materials for thermoelectric applications

被引：0
作者：
Ogura, Atsushi [1 ,2 ]
Yokogawa, Ryo [1 ,2 ]
机构：
[1] Meiji Univ, Sch Sci & Technol, Kawasaki, Kanagawa, Japan
[2] Meiji Univ, Meiji Renewable Energy Lab, Kawasaki, Kanagawa, Japan
来源：
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
关键词：
Phonon; thermoelectric device; group IV materials; GROWTH;
D O I：
10.1109/EDTM50988.2021.9420883
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the phonon properties of group IV materials for thermoelectric applications evaluated by Raman spectroscopy and inelastic x-ray scattering technique, which can directly detect phonon energy. The effects of oxidation, interface properties, alloying, etc. on thermal conductivity characteristics were evaluated in detail. The experimental results show that the change of the interface (SiO2/Si) properties and atom position (alloying) for group IV materials dramatically influence on the phonon scattering with respect to the viewpoint of phonon energy.
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页数：3
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