Silicon tunnel diodes formed by proximity rapid thermal diffusion

被引：25

作者：

Wang, JL ^{[1
]}

Wheeler, D ^{[1
]}

Yan, Y ^{[1
]}

Zhao, JL ^{[1
]}

Howard, S ^{[1
]}

Seabaugh, A ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期

关键词：

negative differential resistance (NDR); negative resistance; rapid thermal diffusion; spin-on diffusant; tunnel diode;

D O I：

10.1109/LED.2002.807706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the first silicon tunnel diodes (TDs) formed using proximity rapid thermal diffusion and spin-on diffusants. Room temperature peak-to-valley current ratio of 2 is obtained at approximately 100 A/cm(2) peak current density. Secondary ion mass spectroscopy is used to compare proximity rapid thermal diffusion with rapid thermal diffusion from spin-coated diffusants in direct contact with a device wafer. The proximity rapid thermal diffusion approach provides a cleaner wafer surface for subsequent processing and yields TDs with good local uniformity.

引用

页码：93 / 95

页数：3

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