Quantum well electron dynamics in a parallel magnetic field

被引：0

作者：

Horing, NJM ^{[1
]}

Glasser, ML ^{[1
]}

Dong, B ^{[1
]}

机构：

[1] Stevens Inst Technol, Dept Phys & Engn Phys, Hoboken, NJ 07030 USA

来源：

2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY | 2004年

关键词：

in-plane-magnetic-field; nanostructure; quantum well;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A fully quantum mechanical analysis of the role of a parallel magnetic field of arbitrary strength in the electron dynamics of a narrow quantum well is carried out here. We present an explicit analytical closed-form solution for Landau-quantized electrons in skipping states of motion between the narrow well walls effectively involving in-plane translational motion and hybridized with the zero-field lowest subband energy eigenstate. There are many such undamped energy eigenstates corresponding to the many Landau levels, but they are not equally spaced in the quantum well.

引用

页码：365 / 367

页数：3

共 5 条

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