Study on the mechanism of rapid solid-phase recrystallization of hydrogenated amorphous silicon film by rapid thermal processing

被引：5
作者：
Gao, Xiaoyong [1 ]
Feng, Hongliang [1 ]
Lin, Qinggeng [1 ]
Zhang, Liwei [1 ]
Liu, Xuwei [1 ]
Zhao, Jiantao [1 ]
Liu, Yufeng [1 ]
Chen, Yongsheng [1 ]
Gu, Jinhua [1 ]
Yang, Shie [1 ]
Li, Weiqiang [1 ]
Lu, Jingxiao [1 ]
机构：
[1] Zhengzhou Univ, Key Lab Mat Phys, Minist Educ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 15期
基金：
中国国家自然科学基金;
关键词：
Microcrystalline silicon film; Chemical vapor deposition; Rapid thermal annealing; Raman spectroscopy; CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; POLYCRYSTALLINE SILICON; SOLAR-CELLS; SILANE PLASMA; THIN-FILMS; 21ST-CENTURY; TECHNOLOGY;
D O I：
10.1016/j.tsf.2010.02.032
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality hydrogenated amorphous silicon films (a-Si:H) were deposited on quartz glass substrates by radio-frequency plasma-enhanced chemical vapor deposition method. The films were then annealed at 800 degrees C for 3 min by rapid thermal processing (RTP). As confirmed by X-ray diffractometry and Raman spectrometry, hydrogenated microcrystalline silicon films were obtained after the annealing procedure. The mechanism of the rapid solid-phase recrystallization of a-Si:H film by RTP was theoretically mainly attributed to the interaction between short-wavelength photons and ground-state precursor radicals (silicon, SiH(2) and SiH(3)). (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：4473 / 4476
页数：4
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