Study on the mechanism of rapid solid-phase recrystallization of hydrogenated amorphous silicon film by rapid thermal processing

被引：5

作者：

Gao, Xiaoyong ^{[1
]}

Feng, Hongliang ^{[1
]}

Lin, Qinggeng ^{[1
]}

Zhang, Liwei ^{[1
]}

Liu, Xuwei ^{[1
]}

Zhao, Jiantao ^{[1
]}

Liu, Yufeng ^{[1
]}

Chen, Yongsheng ^{[1
]}

Gu, Jinhua ^{[1
]}

Yang, Shie ^{[1
]}

Li, Weiqiang ^{[1
]}

Lu, Jingxiao ^{[1
]}

机构：

[1] Zhengzhou Univ, Key Lab Mat Phys, Minist Educ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 15期

基金：

中国国家自然科学基金;

关键词：

Microcrystalline silicon film; Chemical vapor deposition; Rapid thermal annealing; Raman spectroscopy; CHEMICAL-VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; POLYCRYSTALLINE SILICON; SOLAR-CELLS; SILANE PLASMA; THIN-FILMS; 21ST-CENTURY; TECHNOLOGY;

D O I：

10.1016/j.tsf.2010.02.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality hydrogenated amorphous silicon films (a-Si:H) were deposited on quartz glass substrates by radio-frequency plasma-enhanced chemical vapor deposition method. The films were then annealed at 800 degrees C for 3 min by rapid thermal processing (RTP). As confirmed by X-ray diffractometry and Raman spectrometry, hydrogenated microcrystalline silicon films were obtained after the annealing procedure. The mechanism of the rapid solid-phase recrystallization of a-Si:H film by RTP was theoretically mainly attributed to the interaction between short-wavelength photons and ground-state precursor radicals (silicon, SiH(2) and SiH(3)). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4473 / 4476

页数：4

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