Examination of laser-induced heating on multi-component chalcogenide glass

被引:4
作者
Sisken, Laura [1 ]
Gehlich, Nils [2 ]
Bradford, Joshua [1 ]
Abdulfattah, Ali [1 ]
Shah, Larry [1 ]
Richardson, Martin [1 ]
Richardson, Kathleen [1 ]
机构
[1] Univ Cent Florida, CREOL, Coll Opt & Photon, Orlando, FL 32816 USA
[2] Fraunhofer Inst Laser Technol ILT, D-52074 Aachen, Germany
来源
INFRARED TECHNOLOGY AND APPLICATIONS XL | 2014年 / 9070卷
关键词
chalcogenide glass; laser induced crystallization; glass ceramics; material processing; CRYSTALLIZATION;
D O I
10.1117/12.2053316
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Next-generation infrared (IR) optical components based on chalcogenide glasses (ChGs) may include structures which benefit from the enhanced optical function offered by spatially modifying regions with a nanocrystalline phase. Such modification may be envisioned if the means by which such spatial control of crystallization can be determined using the advantages offered through three-dimensional direct laser write (DLW) processes. While ChGs are well known to have good transparency in the IR, they typically possess lower thresholds for photo-and thermally-induced property changes as compared to other glasses such as silicates. Such low thresholds can result in material responses that include photo-expansion, large thermo-optic increases, mechanical property changes, photo-induced crystallization, and ablation. The present study examines changes in ChG material response realized by exposing the material to different laser irradiation conditions in order to understand the effects of these conditions on such material property changes. Thresholds for photo-expansion and ablation were studied by varying the exposure time and power with sub-bandgap illumination and evidence of laser induced phase change were examined. Simulations were carried out to estimate the temperature increase from the irradiation and the tolerances and stability of the calculations were examined. The models suggest that the processes may have components that are non-thermal in nature.
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页数:7
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共 26 条
  • [1] PHOTODARKENING, STRUCTURAL INSTABILITIES, AND CRYSTALLIZATION OF GLASSY AS2SE3 INDUCED BY LASER IRRADIATION
    ABDULHALIM, I
    BESERMAN, R
    WEIL, R
    [J]. PHYSICAL REVIEW B, 1989, 40 (18): : 12476 - 12486
  • [2] [Anonymous], ZERODUR ZER EXP GLAS
  • [3] Recent advances in chalcogenide glasses
    Bureau, B
    Zhang, XH
    Smektala, F
    Adam, JL
    Troles, J
    Ma, HL
    Boussard-Plèdel, C
    Lucas, J
    Lucas, P
    Le Coq, D
    Riley, MR
    Simmons, JH
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 345 : 276 - 283
  • [4] Local electrical characterization of laser-recorded phase-change marks on amorphous Ge2Sb2Te5 thin films
    Chang, Chia Min
    Chu, Cheng Hung
    Tseng, Ming Lun
    Chiang, Hai-Pang
    Mansuripur, Masud
    Tsai, Din Ping
    [J]. OPTICS EXPRESS, 2011, 19 (10): : 9492 - 9504
  • [5] Amplification of nanosecond pulses to megawatt peak power levels in Tm3+-doped photonic crystal fiber rod
    Gaida, Christian
    Gebhardt, Martin
    Kadwani, Pankaj
    Leick, Lasse
    Broeng, Jes
    Shah, Lawrence
    Richardson, Martin
    [J]. OPTICS LETTERS, 2013, 38 (05) : 691 - 693
  • [6] Hardness, toughness, and scratchability of germanium-selenium chalcogenide glasses
    Guin, JP
    Rouxel, T
    Sangleboeuf, JC
    Melscoët, I
    Lucas, J
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2002, 85 (06) : 1545 - 1552
  • [7] Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences
    Huang, Huan
    Zuo, Fangyuan
    Zhai, Fengxiao
    Wang, Yang
    Lai, Tianshu
    Wu, Yiqun
    Gan, Fuxi
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
  • [8] Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse
    Konishi, Mitsutaka
    Santo, Hisashi
    Hongo, Yuki
    Tajima, Kazuyuki
    Hosoi, Masaharu
    Saiki, Toshiharu
    [J]. APPLIED OPTICS, 2010, 49 (18) : 3470 - 3473
  • [9] Krebs D., 2008, MAT RES SOC P
  • [10] Crystallization behavior of 80GeS2 a⟨...aEuroparts per thousand20Ga2S3 chalcogenide glass
    Lin, Changgui
    Calvez, Laurent
    Roze, Mathieu
    Tao, Haizheng
    Zhang, Xianghua
    Zhao, Xiujian
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 97 (03): : 713 - 720