High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency-trap network

被引：0

作者：

Fong, KL ^{[1
]}

机构：

[1] Philips Semicond, Sunnyvale, CA 94088 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 08期

关键词：

amplifier distortion; analog circuits; bipolar transistor circuits; circuit analysis; integrated circuit design; microwave integrated circuits; nonlinear circuits;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well known that a low-frequency-trap network can be added to the base of an inductively-degenerated common-emitter transconductance stage to improve its third-order intercept point, but not its l-dB compression point. High-frequency equations in Volterra series are used to explain this phenomenon. Analytical and experimental results show that the third-order intercept point increases with the capacitance within the low-frequency-trap network.

引用

页码：1249 / 1252

页数：4

共 17 条

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