Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

被引：160

作者：

Hiramatsu, H ^{[1
]}

Ueda, K ^{[1
]}

Ohta, H ^{[1
]}

Hirano, M ^{[1
]}

Kamiya, T ^{[1
]}

Hosono, H ^{[1
]}

机构：

[1] Japan Sci & Technol Corp, ERATO, Hosono Transparent Electroact Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 07期

关键词：

D O I：

10.1063/1.1544643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial films of LaCuOS1-xSex (x=0-1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of similar to50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm(2)V(-1)s(-1) in LaCuOSe, a comparable value to that of p-type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2x10(20) cm(-3), while maintaining the Hall mobility as large as 4.0 cm(2)V(-1)s(-1). Consequently, a degenerate p-type electrical conduction with a conductivity of 140 S cm(-1) was achieved. (C) 2003 American Institute of Physics.

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页码：1048 / 1050

页数：3

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