Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

被引：158
作者：
Hiramatsu, H [1 ]
Ueda, K [1 ]
Ohta, H [1 ]
Hirano, M [1 ]
Kamiya, T [1 ]
Hosono, H [1 ]
机构：
[1] Japan Sci & Technol Corp, ERATO, Hosono Transparent Electroact Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 07期
关键词：
D O I：
10.1063/1.1544643
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial films of LaCuOS1-xSex (x=0-1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of similar to50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm(2)V(-1)s(-1) in LaCuOSe, a comparable value to that of p-type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2x10(20) cm(-3), while maintaining the Hall mobility as large as 4.0 cm(2)V(-1)s(-1). Consequently, a degenerate p-type electrical conduction with a conductivity of 140 S cm(-1) was achieved. (C) 2003 American Institute of Physics.
引用
收藏
页码：1048 / 1050
页数：3
相关论文
共 31 条
  • [21] QUI J, 1991, APPL PHYS LETT, V59, P2992
  • [22] Thin film growth of transparent p-type CuAlO2
    Stauber, RE
    Perkins, JD
    Parilla, PA
    Ginley, DS
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (12) : 654 - 656
  • [23] Evidence of N-related compensating donors in lightly doped ZnSe:N
    Tournié, E
    Brunet, P
    Faurie, JP
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (15) : 2200 - 2202
  • [24] Transparent p-type semiconductor: LaCuOS layered oxysulfide
    Ueda, K
    Inoue, S
    Hirose, S
    Kawazoe, H
    Hosono, H
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (17) : 2701 - 2703
  • [25] Crystal structure of LaCuOS1-xSex oxychalcogenides
    Ueda, K
    Hosono, H
    [J]. THIN SOLID FILMS, 2002, 411 (01) : 115 - 118
  • [26] Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS1-xSex oxychalcogenides
    Ueda, K
    Hosono, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) : 4768 - 4770
  • [27] Electrical and optical properties of layered oxysulfides with CuS layers: Sr-Cu-M-O-S system (M = Zn, Ga, In)
    Ueda, K
    Hirose, S
    Kawazoe, H
    Hosono, H
    [J]. CHEMISTRY OF MATERIALS, 2001, 13 (05) : 1880 - 1883
  • [28] Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition
    Ueda, K
    Hase, T
    Yanagi, H
    Kawazoe, H
    Hosono, H
    Ohta, H
    Orita, M
    Hirano, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1790 - 1793
  • [29] Strong excitonic recombination radiation from homoepitaxial diamond thin films at room temperature
    Watanabe, H
    Hayashi, K
    Takeuchi, D
    Yamanaka, S
    Okushi, H
    Kajimura, K
    Sekiguchi, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (07) : 981 - 983
  • [30] Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2
    Yanagi, H
    Inoue, S
    Ueda, K
    Kawazoe, H
    Hosono, H
    Hamada, N
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) : 4159 - 4163
1234