Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

被引：158
作者：
Hiramatsu, H [1 ]
Ueda, K [1 ]
Ohta, H [1 ]
Hirano, M [1 ]
Kamiya, T [1 ]
Hosono, H [1 ]
机构：
[1] Japan Sci & Technol Corp, ERATO, Hosono Transparent Electroact Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 07期
关键词：
D O I：
10.1063/1.1544643
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial films of LaCuOS1-xSex (x=0-1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of similar to50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm(2)V(-1)s(-1) in LaCuOSe, a comparable value to that of p-type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2x10(20) cm(-3), while maintaining the Hall mobility as large as 4.0 cm(2)V(-1)s(-1). Consequently, a degenerate p-type electrical conduction with a conductivity of 140 S cm(-1) was achieved. (C) 2003 American Institute of Physics.
引用
收藏
页码：1048 / 1050
页数：3
相关论文
共 31 条
  • [1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
    Akasaki, I
    Amano, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A): : 5393 - 5408
  • [2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
    AMANO, H
    SAWAKI, N
    AKASAKI, I
    TOYODA, Y
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
  • [3] Optical gain in GaN epilayers
    Hess, S
    Taylor, RA
    Ryan, JF
    Beaumont, B
    Gibart, P
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (02) : 199 - 201
  • [4] Preparation of transparent p-type (La1-xSrxO)CuS thin films by r.f. sputtering technique
    Hiramatsu, H
    Ueda, K
    Ohta, H
    Orita, M
    Hirano, M
    Hosono, H
    [J]. THIN SOLID FILMS, 2002, 411 (01) : 125 - 128
  • [5] Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering
    Hiramatsu, H
    Orita, M
    Hirano, M
    Ueda, K
    Hosono, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9177 - 9181
  • [6] Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS
    Hiramatsu, H
    Ueda, K
    Ohta, H
    Orita, M
    Hirano, M
    Hosono, H
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 598 - 600
  • [7] Electronic structure of Sr2Cu2ZnO2S2 layered oxysulfide with CuS layers
    Hirose, H
    Ueda, K
    Kawazoe, H
    Hosono, H
    [J]. CHEMISTRY OF MATERIALS, 2002, 14 (03) : 1037 - 1041
  • [8] Electronic structure of the transparent p-type semiconductor (LaO)CuS -: art. no. 245211
    Inoue, S
    Ueda, K
    Hosono, H
    Hamada, N
    [J]. PHYSICAL REVIEW B, 2001, 64 (24) : 2452111 - 2452115
  • [9] III-nitrides: Growth, characterization, and properties
    Jain, SC
    Willander, M
    Narayan, J
    Van Overstraeten, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) : 965 - 1006
  • [10] P-type electrical conduction in transparent thin films of CuAlO2
    Kawazoe, H
    Yasukawa, M
    Hyodo, H
    Kurita, M
    Yanagi, H
    Hosono, H
    [J]. NATURE, 1997, 389 (6654) : 939 - 942
1234