A 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique

被引：107
|
作者：
Lin, Yi-Jing [1 ]
Jin, Jun-De [1 ]
Chan, C. Y. [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2007年 / 17卷 / 03期
关键词：
low noise amplifier (LNA); noise figure (NF); ultra-wideband (UWB);
D O I：
10.1109/LMWC.2006.890503
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 3.1-10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a current-reused technique and a simple high-pass input matching network is proposed. The implemented LNA presents a maximum power gain of 16 dB, and a good input matching of 50 Omega in the required band. An excellent noise figure (NF) of 3.1-6 dB was obtained in the frequency range of 3.1-10.6 GHz with a power dissipation of 11.9 mW under a 1.8-V power supply. The proposed UWB LNA demonstrates the highest power gain and lowest NF among the published works in 0.18-mu m CMOS technology.
引用
收藏
页码：232 / 234
页数：3
相关论文
共 50 条
  • [1] A 3.1 ∼ 10.6 GHz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique
    Li, Kang
    Liu, Chi
    Yang, Xiaofeng
    Feng, Qian
    Zhu, Chaoxian
    Huang, Guodong
    MECHANICAL AND ELECTRONICS ENGINEERING III, PTS 1-5, 2012, 130-134 : 3251 - 3254
  • [2] Design of 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique
    Wan, Qiuzhen
    Wang, Chunhua
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2011, 65 (12) : 1006 - 1011
  • [3] Bridged-shunt-series peaking technique for a 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier
    Lin, Yu-Liang
    Liao, Hsien-Yuan
    Chiou, Hwann-Kaeo
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2008, 50 (03) : 575 - 578
  • [4] Modeling of 3.1-10.6 GHz CMOS filter-based low noise amplifier for ultra-wideband receivers
    Ragheb, Tamer
    Nieuwoudt, Arthur
    Massoud, Yehia
    2006 IEEE ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE, 2006, : 191 - +
  • [5] Design of a 3.1-10.6 GHz ultra wideband low noise amplifier
    Institute of Microelectronic, Peking University, Beijing 100871, China
    Beijing Daxue Xuebao Ziran Kexue Ban, 2007, 1 (78-81):
  • [6] Design and analysis of a 3.1-10.6 GHz UWB low noise amplifier with current reused technique
    Roein, Meysam Azimi
    2019 IEEE 5TH CONFERENCE ON KNOWLEDGE BASED ENGINEERING AND INNOVATION (KBEI 2019), 2019, : 30 - 35
  • [7] A Low Power 3.1-10.6 GHz Ultra-wideband CMOS Power Amplifier with Resistive Shunt Feedback Technique
    Sapawi, R.
    Sahari, S. K.
    Kipli, Kuryati
    2013 INTERNATIONAL CONFERENCE ON ADVANCED COMPUTER SCIENCE APPLICATIONS AND TECHNOLOGIES (ACSAT), 2014, : 172 - 175
  • [8] Low-Power CMOS Power Amplifier for 3.1-10.6 GHz Ultra-Wideband Transmitter
    Du, Sichun
    Zhu, Xionghui
    Yin, Hongxia
    Huang, Wenbin
    IETE JOURNAL OF RESEARCH, 2016, 62 (01) : 113 - 119
  • [9] A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers
    Shi, Bo
    Chia, Michael Yan Wah
    2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2006, : 57 - 60
  • [10] A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers
    Shi, Bo
    Chia, Yan Wah
    2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2006, : 71 - +
12345