Magnetoresistance in a constricted domain wall

被引：41

作者：

Prieto, JL ^{[1
]}

Blamire, MG ^{[1
]}

Evetts, JE ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.90.027201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that a thin Gd layer inserted between two thicker layers of permalloy contains an in-plane domain wall whose width can be controlled by varying the thickness of the Gd layer. The magnetoresistance of this structure has been measured with the current perpendicular to the plane, thus eliminating spurious contributions which have complicated previous measurements. This is the first measurement to show unambiguously that the domain wall contributes an additional resistance whose magnitude is in good agreement with theory.

引用

页数：4

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