Analysis of Electrical and Capacitance-Voltage of PVA/nSi

被引:16
作者
Ashery, A. [1 ]
Gad, S. A. [2 ]
Turky, G. M. [3 ]
机构
[1] Natl Res Ctr, Solid State Phys Dept, Phys Res Div, Solid State Elect Lab, 33 El Bohouth St, Giza 12622, Egypt
[2] Natl Res Ctr, Solid State Phys Dept, Phys Div, 33 El Bohouth St,El Tahrir St,POB 12622, Giza, Egypt
[3] Natl Res Ctr, Microwave Phys & Dielect Dept, Giza 12622, Egypt
关键词
C-V characteristics; Cole-Cole; electric modulus; I-V; PVA/n-Si polymer-semiconductor (PS); Schottky barrier diode; SCHOTTKY-BARRIER DIODES; DIELECTRIC-PROPERTIES; TEMPERATURE-DEPENDENCE; NEGATIVE CAPACITANCE; SERIES RESISTANCE; THIN-FILMS; FREQUENCY; CONDUCTIVITY; PARAMETERS; MODULUS;
D O I
10.1007/s11664-021-08867-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The present study examined polyvinyl alcohol, PVA, in its pure form without any additives. We investigated its application as a Schottky barrier device, which demonstrates the novelty of this research. We report the synthesis, current-voltage (I-V) and capacitance-voltage (C-V) characteristics, dielectric properties, x-ray diffraction of PVA/nSi. Several parameters, including the ideality factor (n), series resistance (R-s), barrier height (Phi(b)), the saturation current (I-0), and shunt resistance (R-sh) were estimated. It was found that the n values decrease with increasing temperature, setting the enhancement of the device features. (Phi(b)) values tend to increase with temperature rise. Frequency, voltage and temperature dependence of electric modulus ((M'& M '') was investigated, showing that (M') decreases with temperature (T) while the values of (M') are increased with frequency (f). But at low frequencies (M') rises when T is raised: While (M '') tends to be reduced with increasing T at (f) = 10 and 10(3) Hz, with increases at (f) = 2 x 10(7) Hz. We observed semicircles in the Cole-Cole plots where the radii of curvature increased with temperature and voltage.
引用
收藏
页码:3498 / 3516
页数:19
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