A novel low-cost high conversion-efficiency microwave power detector using GaAsFET

A novel simple microwave power detector using a GaAs MESFET is developed at 5.8 GHz. The FET detector has good noise characteristics, temperature stability, and dynamic range. Since the availability of FET is more flexible and the price is lower, the FET defector can be more cost effective than the GaAs Schottky diode. The detector circuit is self-biased and no external DC bias network is required. The detector converts microwave power to DC power with a conversion efficiency of 62.06% and a DC output voltage of 7.35 V at an input power of 29.4 dBm. This is the highest conversion efficiency and DC output voltage ever reported for a self-biased FET detector. The experimental results agree well with the simulation. (C) 2004 Wiley Periodicals, Inc.