Design of high-voltage-tolerant power-rail ESD clamp circuit in low-voltage CMOS processes

被引:6
作者
Ker, Ming-Dou [1 ]
Wang, Chang-Tzu [1 ,2 ]
Tang, Tien-Hao [2 ]
Su, Kuan-Cbeng [2 ]
机构
[1] Natl Chiao Tung Univ, Inst Elect, Nanoelect & Gigascale Syst Lab, Hsinchu 30039, Taiwan
[2] United Microelect Corp, Reliabil Technol & Assurance Div, ESD Engn Dept, Hsinchu, Taiwan
来源
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年
关键词
D O I
10.1109/RELPHY.2007.369967
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A new high-voltage-tolerant power-rail electrostatic discharge (ESD) clamp circuit with a special ESD detection circuit realized with only 1xVDD devices for 3xVDD-tolerant mixed-voltage I/O interfaces is proposed. The proposed power-rail ESD clamp circuit with excellent ESD protection effectiveness has been verified in a 0.13-mu m CMOS process with only 1.2-V devices.
引用
收藏
页码:594 / +
页数:2
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