Floquet engineering of excitons in semiconductor quantum dots

被引：16

作者：

V. Iorsh, I. ^{[1
,2
]}

Zezyulin, D. A. ^{[1
]}

Kolodny, S. A. ^{[1
,2
]}

Sinitskiy, R. E. ^{[2
]}

V. Kibis, O. ^{[2
]}

机构：

[1] ITMO Univ, Dept Phys & Engn, St Petersburg 197101, Russia

[2] Novosibirsk State Tech Univ, Dept Appl & Theoret Phys, Karl Marx Ave 20, Novosibirsk 630073, Russia

来源：

PHYSICAL REVIEW B | 2022年 / 105卷 / 16期

基金：

俄罗斯科学基金会;

关键词：

SYSTEMS;

D O I：

10.1103/PhysRevB.105.165414

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Within the Floquet theory of periodically driven quantum systems, we demonstrate that a high-frequency electromagnetic field can be used as an effective tool to control excitonic properties of semiconductor quantum dots (QDs). It is shown, particularly, that the field both decreases the exciton binding energy and dynamically stabilizes the exciton, increasing its radiative lifetime. The developed theory can serve as a basis for the ultrafast method to tune spectral characteristics of the QD-based photon emitters by a high-frequency field.

引用

页数：7

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