Evidence for PT-ferroelectries interface scenario of different fatigue behaviors between Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin film capacitors

被引：10

作者：

Chu, MW ^{[1
]}

Ganne, M ^{[1
]}

Tessier, PY ^{[1
]}

Eon, D ^{[1
]}

Caldes, MT ^{[1
]}

Brohan, L ^{[1
]}

机构：

[1] Inst Mat Jean Rouxel, UMR 6502, Chim Solide Lab, F-44322 Nantes 03, France

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2002年 / 5卷 / 2-3期

关键词：

Bi4Ti3O12; Bi3.25La0.75Ti3O12; interface; fatigue; X-ray photoelectron spectroscopy (XPS); defect;

D O I：

10.1016/S1369-8001(02)00102-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Via "ex situ" X-ray photoelectron spectroscopy (XPS) studies, Pt-Bi4Ti3O12(BTO) and Pt-Bi3.25La0.75Ti3O12(BLT) interfaces are indicated to possess different features. The polar metal-impurity-oxygen-vacancy defect pairs determined in Pt-BTO interfaces can pin the polarization of surrounding lattices leading to fatigue of BTO capacitors. Due to the specific surface configurations of BLT crystals, the concentration of similar defect pairs are relatively low in Pt-BLT interfaces. BLT capacitors thus exhibit good fatigue resistance. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：179 / 182

页数：4

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