Radiation hardness of porous silicon

被引：10

作者：

Ushakov, VV

Dravin, VA

Melnik, NN

Karavanskii, VA

Konstantinova, EA

Timoshenko, VY

机构：

[1] RUSSIAN ACAD SCI, INST GEN PHYS, MOSCOW 11794, RUSSIA

[2] MOSCOW MV LOMONOSOV STATE UNIV, FAC PHYS, MOSCOW 119899, RUSSIA

来源：

SEMICONDUCTORS | 1997年 / 31卷 / 09期

关键词：

D O I：

10.1134/1.1187143

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of irradiation by 300-keV Ar+ ions on the properties of electrochemically produced porous silicon is studied at doses of 5 x 10(14)-1 x 10(16) cm(-2). Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is substantially greater than that of single crystal silicon. (C) 1997 American Institute of Physics.

引用

页码：966 / 969

页数：4