Electrical properties of atomically controlled Si:P nanowires created by scanning probe microscopy

被引：0

作者：

Ruess, F. J. ^{[1
]}

Goh, K. E. J. ^{[1
]}

Weber, Bent ^{[1
]}

Hamilton, A. R. ^{[1
]}

Simmons, M. Y. ^{[1
]}

机构：

[1] Australian Res Council Ctr Excellence Quantum Com, Sydney, NSW 2052, Australia

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

基金：

澳大利亚研究理事会;

关键词：

silicon; scanning probe microscopy; nanoelectronics; transport measurements; dephasing mechanisms;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the electrical proper-ties of highly phosphorus-doped, planar nanowires with widths of 90, 50 and 27 mu. I-V measurements at 4 K show that all wires are highly ohmic with resistivities as low as I x 10(-8) Omega cm. Magnetotransport measurements are consistent with 2D weak localization theory and demonstrate an increasing contribution to conductance as the electron phase coherence length approaches the wire width.

引用

页码：687 / +

页数：2

共 4 条

[1]

HIKAMI S, 1980, PROG THEOR PHYS, V63, P707, DOI 10.1143/PTP.63.707

[2] The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures [J].

Ruess, FJ ;

Oberbeck, L ;

Goh, KEJ ;

Butcher, MJ ;

Gauja, E ;

Hamilton, AR ;

Simmons, MY .

NANOTECHNOLOGY, 2005, 16 (10) :2446-2449

[3] Toward atomic-scale device fabrication in silicon using scanning probe microscopy [J].

Ruess, FJ ;

Oberbeck, L ;

Simmons, MY ;

Goh, KEJ ;

Hamilton, AR ;

Hallam, T ;

Schofield, SR ;

Curson, NJ ;

Clark, RG .

NANO LETTERS, 2004, 4 (10) :1969-1973

[4] Nanoscale electronics based on two-dimensional dopant patterns in silicon [J].

Shen, TC ;

Kline, JS ;

Schenkel, T ;

Robinson, SJ ;

Ji, JY ;

Yang, C ;

Du, RR ;

Tucker, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06) :3182-3185

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