Quantitative correlation between intrinsic stress and microstructure of thin films

被引：16

作者：

Depla, D. ^{[1
]}

Braeckman, B. R. ^{[1
]}

机构：

[1] Univ Ghent, Dept Solid State Sci, Krijgslaan 281-S1, B-9000 Ghent, Belgium

来源：

THIN SOLID FILMS | 2016年 / 604卷

关键词：

INTERNAL-STRESS; GRAIN-GROWTH; DEPOSITION; SILVER; POLYCRYSTALLINE; EVOLUTION; COALESCENCE; DEPENDENCE; INTERFACES; COPPER;

D O I：

10.1016/j.tsf.2016.03.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A critical review of the available literature on thin film intrinsic stress has generated a database with 111 entries representing 19 different metals deposited by evaporation. Although there is a wide range of experimental conditions, the data can be presented in a comprehensible way based on the surface mean free path of diffusing adatoms. This characteristic length L is calculated based on the deposition temperature, the melting temperature of the evaporant, and the deposition flux. The calculated strain as a function of L not only shows the trends in a quantitative way, but also allows one to connect the data with the thin-film microstructure as represented in structure-zone models. The proposed procedure appears to also be applicable to amorphous metallic glass thin films (4 alloy systems, 29 entries) as well. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：90 / 93

页数：4

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