Amorphous TiO2-Based Thin-Film Phototransistor

被引：5
|
作者：
Liu, Han-Yin [1 ]
Huang, Ruei-Chin [1 ]
Li, Yi-Ying [2 ]
Lee, Ching-Sung [1 ]
Hsu, Wei-Chou [2 ]
机构：
[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 06期
关键词：
Al2O3; amorphous; phototransistor; TiO2; ultrasonic spray pyrolysis deposition; LAYER; PHOTODETECTOR;
D O I：
10.1109/LED.2017.2694001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents amorphous TiO2-based thin-film phototransistors whose structures are designed for front-side and back-side illumination. The channel and gate dielectric layers are deposited by ultrasonic spray pyrolysis deposition, which is a non-vacuum, cost-effective, thin-film deposition technique similar to chemical vapor deposition. The material structure, chemical composition, and optical characteristics of the amorphous TiO2 thin film are analyzed. The phototransistor shows the typical current-voltage (I-V) characteristics of field-effect transistors. It demonstrates a UV-to-visible rejection ratio of approximately 70-80, a high responsivity of 13.64 A/W, and a high detectivity of 1.64 x 10(12) Jones. The phototransistor can be operated in the high-photo-responsivity and highdetectivity modes by biasing at different quiescent points.
引用
收藏
页码：756 / 759
页数：4
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