GaN-based waveguide devices for long-wavelength optical communications

被引：73

作者：

Hui, R ^{[1
]}

Taherion, S

Wan, Y

Li, J

Jin, SX

Lin, JY

Jiang, HX

机构：

[1] Univ Kansas, Dept Elect Engn & Comp Sci, Lawrence, KS 66044 USA

[2] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 09期

关键词：

D O I：

10.1063/1.1557790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Refractive indices of AlxGa1-xN with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed. (C) 2003 American Institute of Physics.

引用

页码：1326 / 1328

页数：3