On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors

被引：184

作者：

Uemura, Takafumi ^{[1
,2
]}

Rolin, Cedric ^{[3
]}

Ke, Tung-Huei ^{[3
]}

Fesenko, Pavlo ^{[3
]}

Genoe, Jan ^{[3
]}

Heremans, Paul ^{[3
]}

Takeya, Jun ^{[1
,2
]}

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[3] IMEC, B-3001 Louvain, Belgium

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 01期

基金：

欧洲研究理事会;

关键词：

THIN-FILM TRANSISTORS; CONTACT RESISTANCE; SEMICONDUCTOR; THICKNESS; INJECTION;

D O I：

10.1002/adma.201503133

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Omega cm is achieved, which is stable over a wide V-G range.

引用

页码：151 / +

页数：6

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