On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors

被引：184

作者：

Uemura, Takafumi ^{[1
,2
]}

Rolin, Cedric ^{[3
]}

Ke, Tung-Huei ^{[3
]}

Fesenko, Pavlo ^{[3
]}

Genoe, Jan ^{[3
]}

Heremans, Paul ^{[3
]}

Takeya, Jun ^{[1
,2
]}

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[3] IMEC, B-3001 Louvain, Belgium

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 01期

基金：

欧洲研究理事会;

关键词：

THIN-FILM TRANSISTORS; CONTACT RESISTANCE; SEMICONDUCTOR; THICKNESS; INJECTION;

D O I：

10.1002/adma.201503133

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Omega cm is achieved, which is stable over a wide V-G range.

引用

页码：151 / +

页数：6

共 50 条

[1] Precise Extraction of Charge Carrier Mobility for Organic Transistors
Xu, Yong
Li, Yun
Li, Songlin
Balestra, Francis
Ghibaudo, Gerard
Li, Wenwu
Lin, Yen-Fu
Sun, Huabin
Wan, Jing
Wang, Xinran
Guo, Yufeng
Shi, Yi
Noh, Yong-Young
ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (20)
[2] Recent Progress in High-Mobility Organic Transistors: A Reality Check
Paterson, Alexandra F.
Singh, Saumya
Fallon, Kealan J.
Hodsden, Thomas
Han, Yang
Schroeder, Bob C.
Bronstein, Hugo
Heeney, Martin
McCulloch, Iain
Anthopoulos, Thomas D.
ADVANCED MATERIALS, 2018, 30 (36)
[3] Impact of the Gate Dielectric on Contact Resistance in High-Mobility Organic Transistors
Paterson, Alexandra F.
Mottram, Alexander D.
Faber, Hendrik
Niazi, Muhammad R.
Fei, Zhuping
Heeney, Martin
Anthopoulos, Thomas D.
ADVANCED ELECTRONIC MATERIALS, 2019, 5 (05):
[4] Study of contact resistance of high-mobility organic transistors through comparisons
Matsumoto, Takafumi
Ou-Yang, Wei
Miyake, Kenjiro
Uemura, Takafumi
Takeya, Jun
ORGANIC ELECTRONICS, 2013, 14 (10) : 2590 - 2595
[5] Contactless charge carrier mobility measurement in organic field-effect transistors
Roelofs, W. S. Christian
Li, Weiwei
Janssen, Rene A. J.
de Leeuw, Dago M.
Kemerink, Martijn
ORGANIC ELECTRONICS, 2014, 15 (11) : 2855 - 2861
[6] Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors
Zhang, Fengjiao
Dai, Xiaojuan
Zhu, Weikun
Chung, Hyunjoong
Diao, Ying
ADVANCED MATERIALS, 2017, 29 (27)
[7] Covalent Organic Frameworks with High Charge Carrier Mobility
Wan, Shun
Gandara, Felipe
Asano, Atsushi
Furukawa, Hiroyasu
Saeki, Akinori
Dey, Sanjeev K.
Liao, Lei
Ambrogio, Michael W.
Botros, Youssry Y.
Duan, Xiangfeng
Seki, Shu
Stoddart, J. Fraser
Yaghi, Omar M.
CHEMISTRY OF MATERIALS, 2011, 23 (18) : 4094 - 4097
[8] Effect of spatial inhomogeneity of charge carrier mobility on current-voltage characteristics in organic field-effect transistors
Sworakowski, Juliusz
Bielecka, Urszula
Lutsyk, Petro
Janus, Krzysztof
THIN SOLID FILMS, 2014, 571 : 56 - 61
[9] The Importance of Contact Resistance in High-Mobility Organic Field-Effect Transistors Studied by Scanning Kelvin Probe Microscopy
Hu, Yuanyuan
Li, Guodong
Chen, Zhuojun
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) : 276 - 279
[10] High-Mobility InSe Transistors: The Role of Surface Oxides
Ho, Po-Hsun
Chang, Yih-Ren
Chu, Yu-Cheng
Li, Min-Ken
Tsai, Che-An
Wang, Wei-Hua
Ho, Ching-Hwa
Chen, Chun-Wei
Chiu, Po-Wen
ACS NANO, 2017, 11 (07) : 7362 - 7370

← 1 2 3 4 5 →