Spin-polarized annihilation lifetime of positron of d0 ferromagnetism in gallium nitride: A two-component density functional theory simulation

被引：4

作者：

Hagiwara, Satoshi ^{[1
]}

Suzuki, Yasumitsu ^{[1
]}

Watanabe, Kazuyuki ^{[1
]}

机构：

[1] Tokyo Univ Sci, Dept Phys, Shinjuku Ku, Tokyo 1628601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 04期

关键词：

AUGMENTED-WAVE METHOD; SEMICONDUCTORS; VACANCY;

D O I：

10.7567/APEX.9.041001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spin-polarized annihilation lifetime of a positron (SPALP) trapped by the Ga vacancies in GaN was investigated using two-component density functional theory calculations with geometry optimization. SPALP clearly depends on the charged states of the Ga vacancies and the induced magnetization. This dependence is attributed to the overlap between the positron and electron densities around the defect. Thus, the present study proves the useful role of SPALP for probing and revealing the mechanism of d(0) ferromagnetism. (C) 2016 The Japan Society of Applied Physics

引用

页数：4