共 50 条
Preparation of rGO/Ni2ZnS4 and high-performance asymmetric supercapacitors with GO/ZIF-8 template
被引:7
|作者:
Cui, Yuhan
[1
]
Zhao, Chunyan
[1
]
Zhao, Lijie
[1
]
Yu, Haixia
[1
]
Wang, Jianxin
[1
]
Zhang, Zhuanfang
[1
]
机构:
[1] Qiqihar Univ, Coll Chem & Chem Engn, Qiqihar 161006, Peoples R China
关键词:
ZIF-8;
Graphene oxide;
Etching;
Asymmetric supercapacitor;
METAL-ORGANIC FRAMEWORKS;
ELECTRODE;
ZIF-8;
D O I:
10.1016/j.diamond.2022.108965
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Graphene oxide (GO) was used as a substrate, and ZIF-8 was grown in situ on the GO surface and used as a template. The rGO/Ni2ZnS4 composite was prepared by nickel nitrate etching, carbonization, and hydrothermal vulcanization. X-ray diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were used to characterize the structure and morphology of the composite material. Then the rGO/ Ni2ZnS4 composite material was made into a cathode material, and its electrochemical performance was tested. The test results showed that the specific capacitance value of the rGO/Ni2ZnS4-1.5h electrode material was as high as 1150 F center dot g 1 at a current density of 1 A center dot g 1, when the current density reaches 10 A center dot g 1, the rate performance is 63.3%. After 2000 cycles at a current density of 10 A center dot g 1, the capacitance retention rate is 59.7%. In addition, an asymmetric capacitor composed of AC//rGO/Ni2ZnS4-1.5h has an energy density of 31.06 Wh center dot kg 1, when the power density is 750.44 W center dot kg 1. When the high power density is 7489.18 W center dot kg 1, the energy density remains at 12.69 Wh center dot kg 1.
引用
收藏
页数:11
相关论文